CMOS-SOI-MEMS sensors and imagers implemented by CMOS compatible icromachining, which I call CMOST and which enables system-on-chip approach as well as Wafer Level Processing and Packaging.
We pursue:
TMOS sensors and imagers: for passive uncooled IR sensing. We have successfully
demonstrated this technology in commercial FABs such as STMicroelectronics and XFAB. This R&D is currently pursued at Technion in the context of TODOS Technologies (a startup of Technion R&D Foundation).
Our road map includes: Motion Sensors, Presence Sensors, and QVGA imagers for automotive applications.
The TMOS is a micro-machined MOS transistor and is a disruptive technology with the following main advantages:
- CMOS-SOI Standard Technology: matured/ low cost/ low power
- MEMS: Thermally Isolated by post-processing dry etching
- High yield and uniformity
- The TMOS transistor is an active sensor with internal gain- highest responsivity; all other thermal sensors are passive
- Low power operation at subthreshold (< µWatt)
- No “sun-burnt” effects: sensors operate in the presence of sun
GMOS sensors and systems: for detection of gases.
We have successfully demonstrated this unique technology (protected by IP).
This R&D is currently pursued at Technion in the context of TODOS Technologies (a startup of Technion R&D Foundation).
TeraMOS sensors and imagers: for passive uncooled THz sensing;
This R&D activity has not yet been commercialized and is performed within Technion academic part.
It is protected by 3 Technion patents.